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STV200N55F3

MOSFET N-channel 55 V

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SeekIC No. : 00151735 Detail

STV200N55F3: MOSFET N-channel 55 V

STV200N55F3 Data Sheet

floor Price/Ceiling Price

US $ 2.35~3.53 / Piece | Get Latest Price
Part Number:
STV200N55F3
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.53
  • $3.18
  • $2.59
  • $2.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/7

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 200 A
Resistance Drain-Source RDS (on) : 1.8 Ohms Configuration : Single Quad Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : PowerSO-10 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 1.8 Ohms
Continuous Drain Current : 200 A
Package / Case : PowerSO-10
Configuration : Single Quad Source


Parameters:

Technical/Catalog InformationSTV200N55F3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C200A
Rds On (Max) @ Id, Vgs2.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 6800pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs100nC @ 10V
Package / CasePowerSO-10 Exposed Bottom Pad
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STV200N55F3
STV200N55F3
497 7028 2 ND
49770282ND
497-7028-2



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