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STV300NH02L

MOSFET N Ch 24V 0.8m 280A Pwr MOSFET

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SeekIC No. : 00148959 Detail

STV300NH02L: MOSFET N Ch 24V 0.8m 280A Pwr MOSFET

STV300NH02L Data Sheet

floor Price/Ceiling Price

US $ 2.35~3.54 / Piece | Get Latest Price
Part Number:
STV300NH02L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
  • Unit Price
  • $3.54
  • $2.85
  • $2.59
  • $2.35
  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 280 A
Resistance Drain-Source RDS (on) : 0.001 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : PowerSO-12 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Resistance Drain-Source RDS (on) : 0.001 Ohms
Drain-Source Breakdown Voltage : 24 V
Continuous Drain Current : 280 A
Package / Case : PowerSO-12


Features:

RDS(on)*Qg industry's benchmark
Conduction losses reduced
Low profile, very low parasitic inductance
Switching losses reduced


Application

Switching application
OR-ing
Specially designed and optimized for high efficiency DC/DC converters.


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VDS
VGS
ID(1)
ID(1)
IDM(2)
PTOT(3)		 Drain-source voltage (vgs = 0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C		 24
± 20
280
200
1120
300		 V
V
A
A
A
W
  Derating factor 2 W/°C
EAS (4) Single pulse avalanche energy 2296 mJ
Tstg
Tj		 Storage temperature
Operating junction temperature		 -55 to 175 °C
1. This value is limited by package
2. Pulse with limited by safe operating area
3. This value is rated according to Rthj-c
4. Starting Tj = 25°C, ID = 60A, VDD = 20V


Description

This STV300NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable for high current OR-ing application.

 




Parameters:

Technical/Catalog InformationSTV300NH02L
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C280A
Rds On (Max) @ Id, Vgs1 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 7055pF @ 15V
Power - Max300W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs109nC @ 10V
Package / CasePowerSO-10 Exposed Bottom Pad
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STV300NH02L
STV300NH02L
497 7614 1 ND
49776141ND
497-7614-1



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