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Part Number: STV40NE03L20

 

 

 

 

Description: This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-...


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STV40NE03L20 General Description


This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STV40NE03L20 Maximum Ratings

Symbol
 Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
30
V
VDGR
 Drain- gate Voltage (RGS = 20 kW)
30
V
VGS
 Gate-source Voltage
± 20
V
ID
 Drain Current (continuous) at Tc = 25
40
A
ID
 Drain Current (continuous) at Tc = 100
28
A
IDM(•)
 Drain Current (pulsed)
160
A
Ptot
 Total Dissipation at Tc = 25
80
W
 Derating Factor
0.53
W/
dv/dt(1)
 Peak Diode Recovery voltage slope
7
V/ns
Tstg
 Storage Temperature
-65 to 175
Tj
 Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area

STV40NE03L20 Features

` TYPICAL RDS(on) = 0.014 W
` EXCEPTIONAL dv/dt CAPABILITY
` LOW GATE CHARGE A 100
` APPLICATIONORIENTED CHARACTERIZATION

STV40NE03L20 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs
· AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

STV40NE03L20 datasheet

STV0020
PDF/DataSheet Download

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