Features: ` TYPICAL RDS(on) = 0.014 W` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE A 100 ` APPLICATIONORIENTED CHARACTERIZATIONApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs· AUTO...
STV40NE03L20: Features: ` TYPICAL RDS(on) = 0.014 W` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE A 100 ` APPLICATIONORIENTED CHARACTERIZATIONApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY D...
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|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
30 |
V |
|
VGS |
Gate-source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
40 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
28 |
A |
|
IDM(•) |
Drain Current (pulsed) |
160 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
80 |
W |
| Derating Factor |
0.53 |
W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
7 |
V/ns |
|
Tstg |
Storage Temperature |
-65 to 175 |
|
|
Tj |
Max. Operating Junction Temperature |
175 |
This Power MOSFET STV40NE03L20 is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor STV40NE03L20 shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.