STW34NB20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 75 mOhms


Application

·SWITCH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
·HIGH CURRENT, HIGH SPEED SWITCHING

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	200	V
VDGR	Drain- gate Voltage (RGS = 20 k)	200	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25 oC	34	A
ID	Drain Current (continuous) at Tc = 100	21	A
IDM(•)	Drain Current (pulsed)	136	A
Ptot	Total Dissipation at Tc = 25 oC	180	W
	Derating Factor	1.44	W/
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

Using the latest high voltage MESH OVERLAY] process, SGS-Thomson STW34NB20 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Parameters:

Technical/Catalog Information	STW34NB20
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	75 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	3300pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW34NB20 STW34NB20 497 2659 5 ND 49726595ND 497-2659-5