MFG:ST Package Cooled:00+ D/C:3P
MFG: ST
Package Cooled: 00+
D/C: 3P
Description: Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced ...
Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
200 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
200 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
38 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
24 | A |
| IDM(•) |
Drain Current (pulsed) |
152 | A |
| Ptot |
Total Dissipation at Tc = 25 |
180 | W |
|
Derating Factor |
1.44 | W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
5.5 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
STW38NB20
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Using the latest high voltage MESH OVERLAY] process, SGS-Thomson STW34NB20 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, ...
MOSFET N-CH 600V 25A TO-247
MOSFET N-CH 600V 25A TO-247
The FDmesh™ associates STW30NM60D all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
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