FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Power - Max: 180W
Current - Continuous Drain (Id) @ 25° C: 38A
Manufacturer: STMicroelectronics
Input Capacitance (Ciss) @ Vds: 3800pF @ 25V
Series: PowerMESH™
Rds On (Max) @ Id, Vgs: 65 mOhm @ 19A, 10V
Application· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLY (SMPS)
· DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVESpecifications
| Symbol |
Parameter |
Value |
Unit |
VDS
|
Drain-source Voltage (VGS = 0) |
200 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
200 |
V |
| VGS |
Gate-source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
38 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
24 |
A |
| IDM(•) |
Drain Current (pulsed) |
152 |
A |
| Ptot |
Total Dissipation at Tc = 25 |
180 |
W |
|
Derating Factor |
1.44 |
W/ |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
5.5 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 |
|
| Tj |
Max. Operating Junction Temperature |
150 |
|
DescriptionUsing the latest high voltage MESH OVERLAYTM process, SGS-Thomson STW38NB20 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Parameters: | Technical/Catalog Information | STW38NB20 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 38A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 19A, 10V |
| Input Capacitance (Ciss) @ Vds | 3800pF @ 25V |
| Power - Max | 180W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STW38NB20
STW38NB20
497 2658 5 ND
49726585ND
497-2658-5
|
STW38NB20 Data Sheet
