MOSFET N-Ch 500 Volt 45 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 45 A | ||
| Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247 | Packaging : | Tube |
The MDmesh] family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 500 | V |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 500 | V |
| VGS | Gate-Source Voltage | ± 30 | V |
| ID | Drain Current (continuous) at Tc = 25 | 45 | A |
| ID | Drain Current (continuous) at Tc = 100 |
28.4 | A |
| IDM(`) | Drain Current (pulsed) | 180 | A |
| PTOT | Total Dissipation at Tc = 25 | 260 | W |
| Derating Factor | 2.08 | W/ | |
| dv/dt | Peak Diode Recovery voltage slope | 6 | V/ns |
| Tstg | Storage Temperature | 65 to 150 | |
| Tj |
Max. Operating Junction Temperature | 150 |
(`) Pulse width limited by safe operating area
The STW45NM50 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH] horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Technical/Catalog Information | STW45NM50 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 45A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 22.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 3700pF @ 25V |
| Power - Max | 417W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 117nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW45NM50 STW45NM50 497 2760 5 ND 49727605ND 497-2760-5 |