STW45NM50

MOSFET N-Ch 500 Volt 45 Amp

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STW45NM50 Picture
SeekIC No. : 00151351 Detail

STW45NM50: MOSFET N-Ch 500 Volt 45 Amp

floor Price/Ceiling Price

US $ 4.67~6.67 / Piece | Get Latest Price
Part Number:
STW45NM50
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $6.67
  • $6.11
  • $5.12
  • $4.67
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Application

The MDmesh] family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain- gate Voltage (RGS = 20 k) 500 V
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at Tc = 25 45 A
ID
Drain Current (continuous) at Tc = 100
28.4 A
IDM(`) Drain Current (pulsed) 180 A
PTOT Total Dissipation at Tc = 25 260 W
Derating Factor 2.08 W/
dv/dt Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature 65 to 150
Tj
Max. Operating Junction Temperature 150

(`) Pulse width limited by safe operating area

 

 




Description

The STW45NM50 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH] horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.




Parameters:

Technical/Catalog InformationSTW45NM50
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs100 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds 3700pF @ 25V
Power - Max417W
PackagingTube
Gate Charge (Qg) @ Vgs117nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW45NM50
STW45NM50
497 2760 5 ND
49727605ND
497-2760-5



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