STW45NM50FD

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Application

ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	500	V
VDGR	Drain- gate Voltage (RGS = 20 k)	500	V
VGS	Gate-Source Voltage	± 30	V
ID	Drain Current (continuous) at Tc = 25	45	A
ID	Drain Current (continuous) at Tc = 100	28.4	A
IDM(`)	Drain Current (pulsed)	180	A
PTOT	Total Dissipation at Tc = 25	417	W
	Derating Factor	2.08	W/
dv/dt(1)	Peak Diode Recovery voltage slope	20	V/ns
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area (1) I_SD 45A, di/dt400A/µs, V_DD V_(BR)DSS, Tj T_JMAX.

 

 

Description

The FDmesh™ STW45NM50FD associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. STW45NM50FD is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Parameters:

Technical/Catalog Information	STW45NM50FD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	100 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds	3600pF @ 25V
Power - Max	417W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW45NM50FD STW45NM50FD 497 2718 5 ND 49727185ND 497-2718-5