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STW47NM50

ApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.Specifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (...

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SeekIC No. : 004509144 Detail

STW47NM50: ApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.Specifications Symbol Param...

STW47NM50 Data Sheet

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Part Number:
STW47NM50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 500 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 500 V
VGS

Gate-source Voltage

 ±30 V
ID

Drain Current (continuous) at Tc = 25

45 A
ID

Drain Current (continuous) at Tc = 100

28.4 A
IDM(•)

Drain Current (pulsed)

 180 A
PTOT

Total Dissipation at Tc = 25

417 W

Derating Factor

 2.08 W/

dv/dt(1)

 Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

 -65 to 150
Tj

Max. Operating Junction Temperature

 150
(•)Pulse width limited by safe operating area
(1)ISD 45A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.


Description

The STW47NM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.




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