STW47NM60 Selling Leads, Price trend, STW47NM60 DataSheet download, circuit diagram from SeekIC.com

ApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.Specifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain- gate Voltage (...

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STW47NM60: ApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.Specifications Symbol Param...

STW47NM60 Data Sheet

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Part Number:: STW47NM60
Supply Ability:: 5000

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What is this?

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Product Details

Description

Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	600	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	47	A
I_D	Drain Current (continuous) at T_c = 100	28	A
I_DM(•)	Drain Current (pulsed)	180	A
P_TOT	Total Dissipation at T_c = 25	417	W
	Derating Factor	3.33	W/
dv/dt(1)	Peak Diode Recovery voltage slope	15	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD47A, di/dt 400A/µs, V_DD V_(BR)DSS, Tj T_JMAX.

Description

This improved version of MDmesh™ STW47NM60 which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics.The adoption of the Company's proprietary strip technique yields overall performances that are significantly better than that of similar competition's products.

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STW47NM60

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