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STW50N10

MOSFET REORD 511-STW55NE10

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SeekIC No. : 00166451 Detail

STW50N10: MOSFET REORD 511-STW55NE10

STW50N10 Data Sheet

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Part Number:
STW50N10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Continuous Drain Current : 50 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.035 Ohms


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·POWER MOTOR CONTROL
·DC-DC & DC-AC CONVERTERS
·SYNCRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 100 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 100 V
VGS

Gate-source Voltage

 ±20 V
ID

Drain Current (continuous) at Tc = 25 oC

 50 A
ID

Drain Current (continuous) at Tc = 100 oC

 35 A
IDM(•)

Drain Current (pulsed)

 200 A
Ptot

Total Dissipation at Tc = 25 oC

 180 W

Derating Factor

 1.2 W/
Tstg

Storage Temperature

 -65 to 175  
Tj

Max. Operating Junction Temperature

 175  



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