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STW55NE10

Application·HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS·MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERS·AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = ...

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SeekIC No. : 004509148 Detail

STW55NE10: Application·HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS·MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERS·AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter ...

STW55NE10 Data Sheet

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Part Number:
STW55NE10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS
· AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 100 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 100 V
VGS

Gate-source Voltage

 ±20 V
ID

Drain Current (continuous) at Tc = 25

55 A
ID

Drain Current (continuous) at Tc = 100

35 A
IDM(.)

Drain Current (pulsed)

 220 A
PTOT

Total Dissipation at Tc = 25

180 W

Derating Factor

 1.2 W/

dv/dt(1)

 Peak Diode Recovery voltage slope

9

V/ns

Tstg

Storage Temperature

 -65 to 175
Tj

Max. Operating Junction Temperature

 175
(•)Pulse width limited by safe operating area
(1)ISD 55A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.


Description

This Power MOSFET STW55NE10 is the latest development of STMicroelectronics unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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