MOSFET N-channel 600 V FDMesh
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 51 A | ||
| Resistance Drain-Source RDS (on) : | 0.06 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247 | Packaging : | Tube |
| Technical/Catalog Information | STW55NM60ND |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 51A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 25.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 5800pF @ 50V |
| Power - Max | 350W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW55NM60ND STW55NM60ND 497 7036 5 ND 49770365ND 497-7036-5 |