FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 150nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Power - Max: 300W
Current - Continuous Drain (Id) @ 25° C: 80A
Manufacturer: STMicroelectronics
Series: STripFET™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds: 3850pF @ 25V
Application DC-AC & DC-DC CONVERTERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERSSpecifications
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V |
| VGS |
Gate-source Voltage |
± 20 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
80 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
80 |
A |
| IDM(•) |
Drain Current (pulsed) |
320 |
A |
| Ptot |
l Dissipation at Tc = 25 |
300 |
W |
| |
Derating Factor |
2 |
W/oC |
| EAS (1) |
Single Pulse Avalanche Energy |
870 |
mJ |
| Tstg |
Storage Temperature |
-65 to 175 |
oC |
| Tj |
Max. Operating Junction Temperature |
175 |
oC |
DescriptionThis Power MOSFET STW80NF06 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parameters: | Technical/Catalog Information | STW80NF06 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 3850pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 150nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STW80NF06
STW80NF06
497 3266 5 ND
49732665ND
497-3266-5
|
STW80NF06 Data Sheet
