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Application·HIGH-EFFICIENCY DC-DC CONVERTERS· UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit STB_P_W80NF12 STP80NF12FP VDS Drain-source Voltage (VGS = 0) 120 V VDGR Drain- gate Voltage (RGS = 20 k) 120 V VGS Gate-source Voltage ±20 V ID(*) ...

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SeekIC No. : 004509159 Detail

STW80NF12: Application·HIGH-EFFICIENCY DC-DC CONVERTERS· UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit STB_P_W80NF12 STP80NF12FP VDS Drain-source Voltage (VGS = 0) 120 V ...

STW80NF12 Data Sheet

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Part Number:: STW80NF12
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/23

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Product Details

Description

Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL

Specifications

Symbol	Parameter	Value		Unit
Symbol	Parameter	STB_P_W80NF12	STP80NF12FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	120		V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	120		V
V_GS	Gate-source Voltage	±20		V
I_D(*)	Drain Current (continuous) at T_c= 25	80	80(#)	A
I_D	Drain Current (continuous) at T_c = 100	60	60(#)	A
I_DM(•)	Drain Current (pulsed)	320	320(#)	A
P_tot	Total Dissipation at T_c = 25	300	45	W
	Derating Factor	2.0	0.3	W/
dv/dt(1)	Peak Diode Recovery voltage slope	10		V/ns
E_AS (2)	Single Pulse Avalanche Energy	700		mJ
V_ISO	Insulation Withstand Voltage (DC)	------	2500	V
T_stg	Storage Temperature	-55 to 175
T_j	Max. Operating Junction Temperature	-55 to 175

Description

This MOSFET series STW80NF12 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. STW80NF12 is therefore suitable as primary switch in advanced highefficiency,high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

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STW80NF12

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