Application·DC-AC & DC-DC CONVERTERS·AUTOMOTIVE ENVIRONMENT·SOLENOID AND RELAY DRIVERS·MOTOR CONTROL, AUDIO AMPLIFIERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain- gate Voltage (RGS = 20 k) 55 V VGS Gate-source Vol...
STW80NF55-06: Application·DC-AC & DC-DC CONVERTERS·AUTOMOTIVE ENVIRONMENT·SOLENOID AND RELAY DRIVERS·MOTOR CONTROL, AUDIO AMPLIFIERSSpecifications Symbol Parameter Value Unit VDS Drain-source V...
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| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
55 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
55 | V |
| VGS |
Gate-source Voltage |
±20 | V |
| ID (*) |
Drain Current (continuous) at Tc = 25 |
80 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
80 | A |
| IDM(•) |
Drain Current (pulsed) |
320 | A |
| PToT |
Total Dissipation at Tc = 25 |
300 | W |
|
Derating Factor |
2 | W/ | |
|
EAS (1) |
Single Pulse Avalanche Energy |
1 |
J |
| Tstg |
Storage Temperature |
-65 to 175 | |
| Tj |
Max. Operating Junction Temperature |
This Power MOSFET STW80NF55-06 is the latest development of STMicroelectronics unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.