STW80NF55-08

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.008 Ohms


Application

· DC-AC & DC-DC CONVERTERS
· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	55	V
VDGR	Drain- gate Voltage (RGS = 20 k)	55	V
VGS	Gate-source Voltage	±20	V
ID(*)	Drain Current (continuous) at Tc = 25	80	A
ID	Drain Current (continuous) at Tc = 100	80	A
IDM(.)	Drain Current (pulsed)	320	A
PTOT	Total Dissipation at Tc = 25	300	W
	Derating Factor	2	W/
EAS (1)	Single Pulse Avalanche Energy	870	mJ
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

(•)Pulse width limited by safe operating area
(1) Starting Tj = 25°C, I_D = 40A, V_DD = 40V
(*) Current Limited by wire bonding


Description

This Power MOSFET STW80NF55-08 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STW80NF55-08
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	8 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	3850pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW80NF55 08 STW80NF5508