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STW9NC70Z

Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate...

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STW9NC70Z: Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that...

STW9NC70Z Data Sheet

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Part Number:
STW9NC70Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.




Application

· SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION 
· WELDING EQUIPMENT


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 700 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 700 V
VGS

Gate-source Voltage

 ±25 V
ID

Drain Current (continuous) at Tc = 25

7.5 A
ID

Drain Current (continuous) at Tc = 100

4.7 A
IDM(•)

Drain Current (pulsed)

 30 A
PTOT

Total Dissipation at Tc = 25

160 W

Derating Factor

 1.28 W/

IGS

 Gate-source Current (DC)

±50

mA

VESD(G-S)

 Gate source ESD(HBM-C=100pF, R=15K)

3

KV

dv/dt(1)

 Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

 -65 to 150
Tj

Max. Operating Junction Temperature

 150
(•)Pulse width limited by safe operating area
(1)ISD 7.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.


Description

The STW9NC70Z  third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




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