STX112

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-92
Maximum DC Collector Current : 2 A
Maximum Collector Cut-off Current : 1000 uA


Application

· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT


Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE = 0)	100	V
VCEO	Collector-Emitter Voltage (IB = 0)	100	V
VEBO	Emitter-Base Voltage (IC = 0)	5	V
IC	Collector Current	2	A
ICM	Collector Peak Current (tp < 5 ms)	4	A
IB	Base Current	50	mA
Ptot	Total Dissipation at Tamb= 25	1.2	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The STX112 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package. It is intented for use in linear and switching applications.

Parameters:

Technical/Catalog Information	STX112
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	2A
Power - Max	1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 8mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	2mA
Mounting Type	Through Hole
Package / Case	TO-92-3 (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STX112 STX112