STX817A

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
Maximum Operating Frequency : 50 MHz
DC Collector/Base Gain hfe Min : 140


Features:

TO-92 package suitable for through-hole PCB assembly
In compliance with the 2002/93/EC European Directive


Application

Voltage regulation
Relay driver
Generic switch


Specifications

SYMBOL		VALUE	UNIT
VCBO	Collector-base voltage(IE= 0)	-80	V
VCEO	Collector-emitter voltage(IB= 0)	-80	V
VEBO	Emitter-Base voltage(IC= 0)	-5	V
IC	Collector Current	-1.5	A
ICM	Collector peak current (tP < 5ms)	-2	A
IB	Base current	-0.3	A
IBM	Base peak current (tP < 5ms)	-0.6	A
Ptot	Total dissipation at Tamb = 25	0.9	W
TJ	Max. operating junction temperature	150
Tstg	Storage temperature	-65 to 150

Description

The STX817A is a PNP transistor manufactured using Planar Technology resulting in rugged high performance devices.

Parameters:

Technical/Catalog Information	STX817A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1.5A
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-92-3 (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STX817A STX817A