STX93003

TRANSISTOR PNP 400V 1A TO-92

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STX93003 Picture
SeekIC No. : 003436439 Detail

STX93003: TRANSISTOR PNP 400V 1A TO-92

floor Price/Ceiling Price

US $ .04~.31 / Piece | Get Latest Price
Part Number:
STX93003
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $.31
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Series: - Manufacturer: STMicroelectronics
Transistor Type: PNP Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 400V Resistor - Base (R1) (Ohms): -
Capacitance : 4 pF Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 1mA Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V Power - Max: 1.5W
Frequency - Transition: - Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92    

Description

Series: -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Frequency - Transition: -
Mounting Type: Through Hole
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 400V
Power - Max: 1.5W
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Manufacturer: STMicroelectronics
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA


Application

· ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


Specifications

Symbol Parameter Value Unit
VCES

Collector-Emitter Voltage (VBE = 0)

-500 V
VCEO

Collector-Emitter Voltage (IB = 0)

-400 V
VEBO

Emitter-Base Voltage (IC = 0)
(IC = 0, IB = -0.5 A, tp < 10s, Tj < 150)

V(BR)EBO V

 IC

Collector Current

 -1

 A

ICM

Collector Peak Current (tp < 5 ms)

-3 A
IB

Base Current

-0.5 A
IBM

Base Peak Current (tp < 5 ms)

-1.5 A
Ptot

Total Dissipation at TC = 25

1.5 W
Tstg

Storage Temperature

-65 to 150
Tj

Max. Operating Junction Temperature

150



Description

The STX93003 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The STX93003 is expressly designed for a new solution to be used in compact fluorescent lamps,where it is coupled with the STX83003, its complementary NPN transistor.




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