TRANSISTOR PNP 400V 1A TO-92
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| Series: | - | Manufacturer: | STMicroelectronics | ||
| Transistor Type: | PNP | Current - Collector (Ic) (Max): | 1A | ||
| Voltage - Collector Emitter Breakdown (Max): | 400V | Resistor - Base (R1) (Ohms): | - | ||
| Capacitance : | 4 pF | Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 500mA | ||
| Current - Collector Cutoff (Max): | 1mA | Resistor - Emitter Base (R2) (Ohms): | - | ||
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 16 @ 350mA, 5V | Power - Max: | 1.5W | ||
| Frequency - Transition: | - | Mounting Type: | Through Hole | ||
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) | Supplier Device Package: | TO-92 |
| Symbol | Parameter | Value | Unit |
| VCES |
Collector-Emitter Voltage (VBE = 0) |
-500 | V |
| VCEO |
Collector-Emitter Voltage (IB = 0) |
-400 | V |
| VEBO |
Emitter-Base Voltage (IC = 0) |
V(BR)EBO | V |
|
IC |
Collector Current |
-1 |
A |
| ICM |
Collector Peak Current (tp < 5 ms) |
-3 | A |
| IB |
Base Current |
-0.5 | A |
| IBM |
Base Peak Current (tp < 5 ms) |
-1.5 | A |
| Ptot |
Total Dissipation at TC = 25 |
1.5 | W |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
The STX93003 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STX93003 is expressly designed for a new solution to be used in compact fluorescent lamps,where it is coupled with the STX83003, its complementary NPN transistor.