STY60NM60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 60 A
Package / Case : Max247
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain- gate Voltage (RGS = 20 k)	600	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	60	A
ID	Drain Current (continuous) at Tc = 100	37.8	A
IDM(`)	Drain Current (pulsed)	240	A
PTOT	Total Dissipation at Tc = 25	560	W
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15K)	6	KV
	Derating Factor	4.5	W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	15	V/ns
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(`)Pulse width limited by safe operating area
(1)I_SD 60A, di/dt 400A/s, V_DD V_(ER)DSS, T_j T_JMAX.


Description

The MDmesh™ STY60NM60 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

Parameters:

Technical/Catalog Information	STY60NM60
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	55 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	7300pF @ 25V
Power - Max	560W
Packaging	Tube
Gate Charge (Qg) @ Vgs	266nC @ 10V
Package / Case	MAX247?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STY60NM60 STY60NM60 497 3268 5 ND 49732685ND 497-3268-5