SUB50N03-20C

Configuration :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 50 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:






Specifications






Description

The SUB50N03-20C(current sensing MOSFET, N-channel 30-V (D-S)) is a kind of vishay siliconix, and the absolute maximum ratings(Tc=25 unless otherwise noted) are drain-source voltage(VDS)=30V, gate-source voltage(VGS)=±20 V, continuous drain current (TJ = 175)(ID)=50A(TC= 25)/32A(TC=125)(note: Package limited.), pulsed drain current(IDM)=100A, avalanche current(IAR)=25A, repetitive avalanche energy(note:Duty cycle 1%.)L = 0.1 mH(EAR)=31 mJ, maximum power dissipation(note:duty cycle 1%.)(PD)=83W(NOTE:See SOA curve for voltage derating.)/2.7W(NOTE:When mounted on 1"square PCB (FR-4 material).), operating junction and storage temperature range(TJ, Tstg)=55 to 175.

And the thermal resistance ratings of SUB50N03-20C are junction-to-ambient PCB mount(note: When mounted on 1"square PCB (FR-4 material).)(RthJA)=55/W, junction-to-case(RthJC)=1.8/W.

The source-drain diode ratings and characteristics (TC = 25)(note:Independent of operating temperature.) are continuous current(Is)=50(max)A, pulsed current(ISM)=100A, forward voltage(note:Pulse test; pulse width 300s, duty cycle 2%)(@ VSD IF = 50 A, VGS = 0 V)=1.3V(typ)/1.6V(max), reverse recovery time(trr)/peak reverse recovery current(IRM(REC))/reverse recovery charge(Qrr)(@ IF=50 A, di/dt =100 A/s)=35(typ); 70(max)ns/1.5(typ)A/0.025(typ)C. The current sense characteristics of SUB50N03-20C are current sensing ratio(r)(@ ID = 1 A, VGSS = 10 V, RSENSE = 2.2)=420/520/620, mirror active resistance(rm(on))=VGS =10 V, ID =10 mA=3.5(typ).