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SUB70N03-09BP

MOSFET 30V 70A 93W

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SeekIC No. : 00165183 Detail

SUB70N03-09BP: MOSFET 30V 70A 93W

SUB70N03-09BP Data Sheet

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Part Number:
SUB70N03-09BP
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 9 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : TO-263-3
Resistance Drain-Source RDS (on) : 9 mOhms
Continuous Drain Current : 70 A


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Currentd
(TJ = 175)		 TC = 25 ID 70b A
TC = 125 50
Pulsed Drain Current IDM 200
Avalanche Current IAS 30
Single Pulse Avalanche Energya L = 0.1 mH EAS 61 mJ
Power Dissipation TC = 25 PD 93b W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175





Description

N-Channel 30-V (D-S) 175C MOSFET PWM Optimized SUB70N03-09BP




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