SUD23N06-31L Selling Leads, Price trend , Vishay/Siliconix, SUD23N06-31L DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00164713 Detail

SUD23N06-31L: MOSFET 60V 23A 100W

SUD23N06-31L Data Sheet

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Part Number:: SUD23N06-31L
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/4/25

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What is this?

SUD23N06-31 evaluate
DescriptionN-Channel 60-V (D-S) MOSFET SUD23N06-31
SUD23N06-31-GE3 evaluate
US $.39 - .64 / Piece

MOSFET N-Ch MOSFET 60V 31 mohm @ 10V
SUD23N06-31L-E3 evaluate
US $.62 - 1.03 / Piece

MOSFET 60V 23A 100W

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	9.1 A
Resistance Drain-Source RDS (on) :	31 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252-3	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Resistance Drain-Source RDS (on) : 31 mOhms
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-252-3
Continuous Drain Current : 9.1 A

Features:

` TrenchFET^®Power MOSFET
` 175 Junction Temperature

Application

· Automotive
- 12-V Systems

Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current(T_J= 175)^b	T_C = 25	I_D	23	A
	T_C= 100		16.5
Pulsed Drain Current		I_DM	50
Continuous Source Current (Diode Conduction)		I_S	23
Avalanche Current		I_AR	20
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	E_AR	20	mJ
Maximum Power Dissipationa	T_C = 25	P_D	100	W
	T_A = 25		3^a
Operating Junction and Storage Temperature Range		T_^J, T_^stg	-55 to 175

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