SUD40N08-16

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Resistance Drain-Source RDS (on) : 16 mOhms
Continuous Drain Current : 40 A
Drain-Source Breakdown Voltage : 80 V
Package / Case : TO-252-3


Features:

`TrenchFET® Power MOSFET
`175 Maximum Junction Temperature
`100% R_g Tested




Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	80	V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 175)b	TC = 25	ID	40	A
	TC = 125		30
Pulsed Drain Current		IDM	60
Continuous Source Current (Diode Conduction)		IS	40
Avalanche Current		IAS	40
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	EAS	80	mJ
Maximum Power Dissipation	TC = 25	PD	136b	W
	TA = 25		3a
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 175

Description

N-Channel 80-V (D-S) 175C MOSFET SUD40N08-16