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SUD40N10-25

MOSFET 100V 40A 33W

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SeekIC No. : 00166035 Detail

SUD40N10-25: MOSFET 100V 40A 33W

SUD40N10-25 Data Sheet

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Part Number:
SUD40N10-25
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 25 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 25 mOhms
Package / Case : TO-252-3


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20
Continuous Drain Current
(TJ = 175)b		 TC = 25 ID 40 A
TC = 125 23
Pulsed Drain Current IDM 70
Continuous Source Current (Diode Conduction)

IS

40

Avalanche Current IAR 40
Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 80 mJ
Maximum Power Dissipation TC = 25 PD 33b W
TA = 25 3a
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175



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