SUD40N10-25-T4-E3

MOSFET N-CH D-S 100V TO252

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SeekIC No. : 003430717 Detail

SUD40N10-25-T4-E3: MOSFET N-CH D-S 100V TO252

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US $ .9~.9 / Piece | Get Latest Price
Part Number:
SUD40N10-25-T4-E3
Mfg:
Supply Ability:
5000

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  • Qty
  • 0~2500
  • Unit Price
  • $.9
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/12

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 40A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 60nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Power - Max: 3W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak)    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Series: TrenchFET®
Packaging: Tape & Reel (TR)
Power - Max: 3W
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25° C: 40A
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V


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