SUD45P03-10

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 10 mOhms
Package / Case : TO-252-3


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±20
Continuous Drain Currentb	TC = 25	ID	-15	A
	TC = 100		-8
Pulsed Drain Current		IDM	-100
Continuous Source Current (Diode Conduction)		IS	-15
Maximum Power Dissipationb	TC = 25	PD	70	W
	TA = 25		4b
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 150

Description

P-Channel Enhancement-Mode Transistor SUD45P03-10