SUD50N02-04P

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 4.3 mOhms
Continuous Drain Current : 34 A
Package / Case : TO-252-3


Specifications

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter	Symbol	Test Conditions	Simulated Data	Measured Data	Unit
Static
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 A	1.7		V
On-State Drain Currenta	ID(on)	VDS =5 V, VGS = 10 V	1190		A
Drain-Source On-State Resistancea	rDS(on)	VGS = 10V, ID = 20A	0.0035	0.0035
		VGS = 10 V, ID = 20A, TJ = 125°C	0.0048
		VGS = 4.5 V, ID = 20 A	0.0049	0.0048
Forward Transconductancea	gfs	VDS = 15 V, ID = 20 A	68		S
Forward Voltagea	VSD	IS= 50A, VGS = 0 V	0.91	0.90	V
Dynamicb
Input Capacitance	Ciss	VGS = 0 V, VDS =10 V, f = 1 MHz	4807	5000	Pf
Output Capacitance	Coss		1664	1650
Reverse Transfer Capacitance	Crss		641	770
Total Gate Chargec	Qg	VDS = 10 V, VGS = 4.5 V, ID =50A	40	40	Nc
Gate-Source Chargec	Qgs		14	14
Gate-Drain Chargec	Qgd		13	13
Turn-On Delay Timec	td(on)	VDD = 10V, RL = 0.20 ID50A, VGEN = 10 V, RG = 2.5	31	20	Ns
Rise Timec	tr		18	20
Turn-Off Delay Timec	td(off)		34	50
Fall Timec	tf		31	15

Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Description

SUD50N02-04P N-Channel 20-V (D-S) 175C MOSFET

The attached spice model of SUD50N02-04P describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance of SUD50N02-04P is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of SUD50N02-04P is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SUD50N02-04P.