Features: `TrenchFET® Power MOSFETS`175 Junction Temperature`New Low Thermal Resistance PackageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Continuous Drain Current(TJ=175) TC = 25 ID 9 A TC = 125 5.2 ...
SUM09N20-270: Features: `TrenchFET® Power MOSFETS`175 Junction Temperature`New Low Thermal Resistance PackageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Sou...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 200 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current(TJ=175) | TC = 25 | ID | 9 | A |
| TC = 125 | 5.2 | |||
| Pulsed Drain Current | IDM | 10 | A | |
| Avalanche Current | IA | 7 | A | |
Repetitive Avalanche Energya |
L = 0.1 mH | EAR | 2.45 | mj |
| Maximum Power Dissipationa | TC = 25 | PD | 60b | W |
| TA = 25 | 3.75 | |||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 to 175 | ||