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SUM110N03-03P

Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.8 V On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1708 A Drain...

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SUM110N03-03P: Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS...

SUM110N03-03P Data Sheet

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SUM110N03-03P
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Specifications

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Simulated
Data		 Measured
Data		 Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.8   V
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1708   A
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A 0.0019 0.0022 Ω
VGS = 10 V, ID = 30A, TJ = 125°C 0.0026

 VGS = 4.5V, ID =20A

 0.0030 0.0031
Forward Voltagea VSD IS = 110A, VGS = 0 V 0.93 1.1 V
Dynamicb
Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 11410 12100 pF
Output Capacitance Coss 811 1910
Reverse Transfer Capacitance Crss 489 1250
Total Gate Chargec Qg VDS = 15 V, VGS = 10 V, ID = 110 A 194 172 nC
Gate-Source Chargec Qgs 40 40
Gate-Drain Chargec Qgd 40 22
Turn-On Delay Timec td(on) VDD = 15V, RL = 0.18Ω
ID= 110A, VGEN = 10 V, RG = 2.5 Ω		 19 20 ns
Rise Timec tr 23 20
Turn-Off Delay Timec td(off) 50 90
Fall Timec tf 44 25
Source-Drain Reverse Recovery Time trr IF = 85 A, di/dt = 100 A/µs 31 60



Description

The attached spice model of SUM110N03-03P describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance of SUM110N03-03P is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of SUM110N03-03P is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SUM110N03-03P.




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