SUM27N20-78

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : TO-263-3
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 78 mOhms


Features:

`TrenchFET®Power MOSFETS
`175 Junction Temperature
` New Low Thermal Resistance Package
` PWM Optimized for Fast Switching




Application

·Isolated DC/DC converters
- Primary-Side Switch




Specifications

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ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	200	V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 175)	TC = 25	ID	27	A
	TC = 125		15.5
Pulsed Drain Current		IDM	60
Avalanche Current		IAR	18
Repetitive Avalanche Energya	L = 0.1 mH	EAR	16.2	mJ
Maximum Power Dissipationa	TC = 25	PD	150b	W
	TA = 25c		3.75
Operating Junction and Storage Temperature Range		TJ, Tstg	−55 to 175

Description

N-Channel 200-V (D-S) 175C MOSFET SUM27N20-78