Position: Home  > All Categories> Integrated Circuits (ICs) > SUM50N03-13LC

SUM50N03-13LC

Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.8 V On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 434 A ...

product image

SUM50N03-13LC Picture
See larger image
SeekIC No. : 004509315 Detail

SUM50N03-13LC: Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS...

SUM50N03-13LC Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SUM50N03-13LC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Specifications

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Simulated
Data		 Measured
Data		 Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.8 V
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 434 A
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 25 A 0.010 0.010 Ω
VGS = 10 V, ID = 25 A, TJ = 125°C 0.016 0.016
VGS = 10 V, ID = 25 A, TJ = 175°C 0.018 0.018
VGS = 4.5 V, ID = 24 A 0.014 0.014
Forward Voltagea VSD IS = 50 A, VGS = 0 V 0.90 1.3 V
Dynamicb
Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 2009 1960 pF
Output Capacitance Coss 367 380
Reverse Transfer Capacitance Crss 111 180
Total Gate Chargec Qg VDS = 15 V, VGS = 10 V, ID = 50 A 34 35 nC
Gate-Source Chargec Qgs 7.6 7.6
Gate-Drain Chargec Qgd 5.6 5.6
Turn-On Delay Timec td(on) VDD = 15 V, RL = 0.30 Ω
ID = 50 A, VGEN = 10 V, RG = 2.5 Ω		 23 10 ns
Rise Timec tr 19 93
Turn-Off Delay Timec td(off) 8 30
Fall Timec tf 10 10
Reverse Recovery Time trr IF = 50,A di/dt = 100 A/µs 29 35

Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Description

The attached spice SUM50N03-13LC describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of the SUM50N03-13LC is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Audio Products
HUC1002
WM-64CT
Tools
TCP202
G084SN05 V.3
Line Protection, Backups
BX0023
A20B-1008-0550
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
View more