Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 50 V
Resistance Drain-Source RDS (on)
: 18 mOhms
Package / Case
: TO-220AB-3
Continuous Drain Current
: 45 A
Features: SpecificationsDescriptionThe SUP45N05-20L/SUB45N05-20L(175 MOSFET, N-Channel 50-V (D-S), logic level) is a kind of vishay siliconix, and the absolute maximum ratings(Tc=25 unless otherwise noted) are drain-source voltage(VDS)=50V, gate-source voltage(VGS)=±20 V, continuous drain current (TJ = 25)(ID)=45A(TC= 25)/32A(TC=125)(note:Package limited.), pulsed drain current(IDM)=100A, avalanche current(IAR)=25A, repetitive avalanche energy(note:Duty cycle 1%.)L = 0.1 mH(EAR)=100mJ, maximum power dissipation(note:Duty cycle 1%.)(PD)=93W(NOTE:See SOA curve for voltage derating.)/3.75W(NOTE:When mounted on 1"square PCB (FR-4 material).), operating junction and storage temperature range(TJ, Tstg)=55 to 175.
And some static of SUP45N05-20L/SUB45N05-20L are drain-source breakdown voltage(V(BR)DSS)(@ VDS = 0 V, ID = 250 uA)=50(min)V, gate-body leakage(IGSS)(@ VDS = 0 V, VGS =±20)=±100 nA, drain-source on-state resistance (rDS(on); @VGS = 10 V, ID = 30 A)=0.018, drain-source on-state resistance (rDS(on); @VGS = 10 V, ID = 30 A, Tj=125)=0.030, drain-source on-state resistance (rDS(on); @VGS = 4.5 V, ID =45A)=0.020, forward transconductance(gfs)(@VDS = 15 V, ID = 45 A)=20S(min).
The source-drain diode ratings and characteristics (TC = 25)(note:Independent of operating temperature.) are pulsed c(ISM)=43A(max), forward voltage(note:Pulse test; pulse width 300s, duty cycle 2%)(@ VSD IF =45A, VGS = 0 V)=1.5V(max), reverse recovery time(trr)(@ IF=45A, di/dt =100 A/s)=49100nsV. The current sense characteristics of SUP45N05-20L/SUB45N05-20L are current sensing ratio(r)(@ ID = 1 A, VGSS = 10 V, RSENSE = 2.2)=420/520/620, mirror active resistance(rm(on))=VGS =10 V, ID =10 mA=3.5(typ).
SUP45N05-20L Data Sheet
