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SUP57N20-33

MOSFET 200V 57A 300W

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SeekIC No. : 00166502 Detail

SUP57N20-33: MOSFET 200V 57A 300W

SUP57N20-33 Data Sheet

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Part Number:
SUP57N20-33
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 57 A
Resistance Drain-Source RDS (on) : 33 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 57 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220AB-3
Resistance Drain-Source RDS (on) : 33 mOhms


Features:

TrenchFET® Power MOSFETS
175oC Junction Temperature




Application

Automotive
- 42-V EPS and ABS
- DC/DC Conversion
- Motor Drives
Isolated DC/DC converters
- Primary-Side Switch




Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20
Continuous Drain Currentd
(TJ = 175)		 TC = 25 ID 57 A
TC = 125 33
Pulsed Drain Current IDM 140
Avalanche Current IAS 35
Repetitive Avalanche Energya L = 0.1 mH EAS 61 mJ
Maximum Power Dissipationb TC = 25 PD 375b W
TA = 25c 2.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175





Description

N-Channel 200-V (D-S) 175C MOSFET SUP57N20-33
 



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