SUP60N10-16L Selling Leads, Price trend, SUP60N10-16L DataSheet download, circuit diagram from SeekIC.com

Features: TrenchFET® Power MOSFET175 Junction TemperaturePWM OptimizedApplicationDC/DC Primary Side SwitchSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Con...

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SeekIC No. : 004509342 Detail

SUP60N10-16L: Features: TrenchFET® Power MOSFET175 Junction TemperaturePWM OptimizedApplicationDC/DC Primary Side SwitchSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) Paramet...

SUP60N10-16L Data Sheet

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Part Number:: SUP60N10-16L
Supply Ability:: 5000

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Upload time: 2025/12/23

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SUP60N02-4m5P evaluate
DescriptionN-Channel 20-V (D-S) 175C MOSFET SUP60N02-4m5P
SUP60N02-4M5P-E3 evaluate
MOSFET 20V 60A 120W 4.5mohm @ 10V
SUP60N06-12P evaluate
DescriptionN-Channel 60-V (D-S) MOSFET SUP60N06-12P

Product Details

Description

Features:

TrenchFET^® Power MOSFET
175 Junction Temperature
PWM Optimized

Application

DC/DC Primary Side Switch

Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	100	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Currentd (T_J = 175)	T_C = 25	I_D	60	A
Continuous Drain Currentd (T_J = 175)	T_C= 125	I_D	35
Pulsed Drain Current		I_DM	100
Avalanche Current		I_AS	40
Single Pulse Avalanche Energy^a	L = 0.1 mH	E_AS	80	mJ
Power Dissipation	T_C = 25	P_D	150^b	W
Operating Junction and Storage Temperature Range		T_^J, T_^stg	-55 to 175

Description

N-Channel 100-V (D-S) 175C MOSFET SUP60N10-16L

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SUP60N10-16L

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