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SUP85N03-04P

MOSFET 30V 85A 166W

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SeekIC No. : 00166696 Detail

SUP85N03-04P: MOSFET 30V 85A 166W

SUP85N03-04P Data Sheet

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Part Number:
SUP85N03-04P
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 85 A
Resistance Drain-Source RDS (on) : 4.3 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 4.3 mOhms
Package / Case : TO-220AB-3
Continuous Drain Current : 85 A


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current
(TJ = 175)		 TC = 25 ID 85a A
TC = 100 85a
Pulsed Drain Current IDM 240
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Maximum Power Dissipationb TC = 25 (TO-220AB and TO-263) PD 166c W
TA = 25 (TO-263)d 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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