DescriptionThe SUTV200 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors.It is intended for use in linear applications up to 1GHz,including UHF television transmitters,transposers and cellular base stations. Features of the SUTV200 are:(1)470-86...
SUTV200: DescriptionThe SUTV200 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors.It is intended for use in linear applications up to 1GHz,including UHF te...
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The SUTV200 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors.It is intended for use in linear applications up to 1GHz,including UHF television transmitters,transposers and cellular base stations.
Features of the SUTV200 are:(1)470-860 MHz;(2)26.5V;(3)gold metallization;(4)Pout=20.0W min. with 9.5dB gain;(5)internal input matching;(6)diffused emitter ballast resistors.
The absolute maximum ratings of the SUTV200 can be summarized as:(1)collector-base voltage:60V;(2)collector-emitter voltage,VCES:60V;(3)emittrt-base voltage,VEBO:4.0V;(4)device current,IC:11.0A;(5)power dissipation,PD:88.8W;(6)juntion temperature,Tj:+200;(7)storage temperature,Tstg:-65 to +150.
If you want to know more information such as the electrical characteristics about the SUTV200, please download the datasheet in www.seekic.com or www.chinaicmart.com .