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SW730

Features: N-Channel MOSFETBVDSS (Minimum) : 400 VRDS(ON) (Maximum) : 1.0 ohmID : 6.0 AQg (Typical) : 32 ncPD (@TC=25 ) : 73 WSpecifications Symbol Parameter Value Units VDSS Drain to Source Voltage 400 V ID Continuous Drain Current (@Tc=25) 6.0 A Continuous...

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SeekIC No. : 004509685 Detail

SW730: Features: N-Channel MOSFETBVDSS (Minimum) : 400 VRDS(ON) (Maximum) : 1.0 ohmID : 6.0 AQg (Typical) : 32 ncPD (@TC=25 ) : 73 WSpecifications Symbol Parameter Value Units VDSS Drai...

SW730 Data Sheet

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Part Number:
SW730
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

N-Channel MOSFET
BVDSS (Minimum)        : 400 V
RDS(ON) (Maximum)    : 1.0 ohm
ID                               : 6.0 A
Qg (Typical)                : 32 nc
PD (@TC=25 )             : 73 W





Specifications

Symbol
 Parameter
Value
Units
VDSS
 Drain to Source Voltage
400
V
ID
 Continuous Drain Current (@Tc=25)
6.0
A
Continuous Drain Current (@Tc=100)
4.3
A
IDM
 Drain Current Pulsed (Note 1)
24
A
VGS
 Gate to Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy (Note 2)
450
mJ
EAR
 Repetitive Avalanche Energy (Note 1)
6.6
mJ
dv/dt
 Peak Diode Recovery dv/dt (Note 3)
5.3
V/ns
P D
 Total Power Dissipation (@Tc=25)
73
W
Derating Factor above 25
0.58
W/
TSTG,TJ
 Operating junction temperature &Storage temperature
-55~+150
TL
 Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
300



Description

The SW730 is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. The SW730 is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.




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