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SXH-189

Features: • Patented High Reliability GaAs HBT Technology• High 3rd Order Intercept : +39 dBm typ. at 1960 MHz• Surface-Mountable Power Plastic PackageApplication• PCS, Cellular Systems• High Linearity IF AmplifiersSpecifications Parameter Absolute Limit Devi...

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SeekIC No. : 004509771 Detail

SXH-189: Features: • Patented High Reliability GaAs HBT Technology• High 3rd Order Intercept : +39 dBm typ. at 1960 MHz• Surface-Mountable Power Plastic PackageApplication• PCS, Cellu...

SXH-189 Data Sheet

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Part Number:
SXH-189
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Patented High Reliability GaAs HBT Technology
• High 3rd Order Intercept : +39 dBm typ. at 1960 MHz
• Surface-Mountable Power Plastic Package


Application

• PCS, Cellular Systems
• High Linearity IF Amplifiers


Specifications

Parameter Absolute Limit
Device Voltage 6V
Device Current 200mA
Power Dissipation 1500mW
RF Input Power 100mW
Junction Temperature +150°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C



Description

Stanford Microdevices' SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

The SXH-189 is specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications.

Its high linearity makes SXH-189 an ideal choice for multi-carrier as well as digital applications.




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