Features: Up to 1.25Gbps operation 75mA peak drive current Separate modulation control Separate output enable for laser safety Differential inputs for data 75K input pulldown resistor Single power supply Available in 16-pin SOIC packagePinoutSpecifications Symbol Parameter Value Unit VE...
SY100EL1003: Features: Up to 1.25Gbps operation 75mA peak drive current Separate modulation control Separate output enable for laser safety Differential inputs for data 75K input pulldown resistor Single power s...
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DescriptionThe SY10/100E111 are low skew 1-to-9 differential drivers designed for clock distributi...

| Symbol | Parameter | Value | Unit |
| VEE | Power Supply (VCC = 0V) | 0 to -7.0 | V |
| VIN | Input Voltage (VCC = 0V) | 0 to 6.0 | V |
| IO | Output Current | 75 | mA |
| TA | Operating Temperature Range | 40 to +85 | °C |
| PTOT | Power Dissipation | 500 | mW |
The SY100EL1003 is a high speed current source for driving a semiconductor laser diode in optical transmission applications. The output current modulation is DC voltage controlled. The modulation current is disabled when output enable is HIGH.
The SY100EL1003 incorporates complementary open collector outputs with a capability of driving peak current of 75mA. The laser driver current is adjustable by selection of RSET. The resistor REXT must be placed betweenOUT and VCC to dissipate the worst case power. RSER is recommended to fix laser diode matching issues.
The SY100EL1003 utilizes the high performance bipolar ASSET technology.