Features: ·Super high dense cell design for low R DS (ON).·Rugged and reliable.·SOT-223 P ackage.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS -30 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous @ TJ=125 -Pulsed ID -...
S DT452AP: Features: ·Super high dense cell design for low R DS (ON).·Rugged and reliable.·SOT-223 P ackage.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS -30 ...
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·Super high dense cell design for low R DS (ON).
·Rugged and reliable.
·SOT-223 P ackage.
|
Parameter |
Symbol |
Limit |
Unit |
| Drain-S ource Voltage |
VDS |
-30 |
V |
| Gate-S ource Voltage |
VGS |
±20 |
V |
| Drain Current-Continuous @ TJ=125 -Pulsed |
ID |
-5.3 |
A |
|
IDM |
-16 |
A | |
| Drain-S ource Diode Forward Current |
IS |
5.3 |
A |
| Maximum Power Dissipation @ Tc=25 Derate above 25 |
PD |
3 |
W |
|
0.08 |
W/ | ||
| Operating and S torage Temperature R ange |
TJ,TSTG |
-65to150 |