SI1012R-T1-GE3

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 6 V
Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 700 mOhms at 4.5 V
Package / Case : SC-75A


Pinout




Description

The Si1012R-T1-GE3 is designed as one kind of N-Channel 1.8 V (G-S) MOSFET device, Si1012R-T1-GE3 can be used in wide range of applications such as (1)drivers: relays, solenoids, lamps, hammers, displays, memories; (2)battery operated systems; (3)power supply converter circuits; (4)load/power switching cell phones, pagers. And the benefits of this device are:(1)ease in driving switches; (2)low offset (error) voltage; (3)low-voltage operation; (4)high-speed circuits; (5)low battery voltage operation.

Features of the Si1012R-T1-GE3 are:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFETR Power MOSFET: 1.8 V Rated; (3)Gate-Source ESD Protected: 2000 V; (4)High-Side Switching; (5)Low On-Resistance: 0.7 ; (6)Low Threshold: 0.8 V (typ.); (7)Fast Switching Speed: 10 ns; (8)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the Si1012R-T1-GE3 can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 6 V;(3)Continuous Drain Current (TJ = 150 °C): 0.600 or 0.400 A;(4)Pulsed Drain Current: 1.0 A;(5)Continuous Source-Drain Diode Current: 0.275 A;(6)Maximum Power Dissipation: 0.175 W or 0.090 W;(7)Operating Junction and Storage Temperature Range: -55 to 150 °C. If you want to know more information about the Si1012R-T1-GE3, please download the datasheet in www.seekic.com or www.chinaicmart.com .