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Si1016X

Features: ` Very Small Footprint` High-Side Switching` Low On-Resistance:N-Channel, 0.7 P-Channel, 1.2 ` Low Threshold: ±0.8 V (typ)` Fast Swtiching Speed: 14 ns` 1.8-V Operation` Gate-Source ESD ProtectionApplication· Replace Digital Transistor, Level-Shifter· Battery Operated Systems· Power Supp...

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SeekIC No. : 004489847 Detail

Si1016X: Features: ` Very Small Footprint` High-Side Switching` Low On-Resistance:N-Channel, 0.7 P-Channel, 1.2 ` Low Threshold: ±0.8 V (typ)` Fast Swtiching Speed: 14 ns` 1.8-V Operation` Gate-Source ESD Pr...

Si1016X Data Sheet

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Part Number:
Si1016X
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Very Small Footprint
` High-Side Switching
` Low On-Resistance:
N-Channel, 0.7
P-Channel, 1.2
` Low Threshold: ±0.8 V (typ)
` Fast Swtiching Speed: 14 ns
` 1.8-V Operation
` Gate-Source ESD Protection




Application

· Replace Digital Transistor, Level-Shifter
· Battery Operated Systems
· Power Supply Converter Circuits
· Load/Power Switching Cell Phones, Pagers




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 −20 V
Gate-Source Voltage VGS ±6
Continuous Drain Current (TJ = 150)a TA = 25 ID 515 485 -390 -370 A
TA = 85 370 350 -280 -265
Continuous Source Current (Diode Conduction)a IS 450 380 -450 -380
Pulsed Drain Currentb IDM 4.0 -3.0
Maximum Power Dissipationa TA = 25 PD 280 250 280 250 W
TA = 85 145 130 145 130
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.




Description

Si1016X Complementary N- and P-Channel 1.8-V (G-S) MOSFET




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