Features: · Very Small Footprint· High-Side Switching· Low On-Resistance: 1.2 · Low Threshold: 0.8 V (typ)· Fast Swtiching Speed: 14 ns·1.8-V Operation· Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories· Battery Operated Systems· Power Supply Con...
Si1023X: Features: · Very Small Footprint· High-Side Switching· Low On-Resistance: 1.2 · Low Threshold: 0.8 V (typ)· Fast Swtiching Speed: 14 ns·1.8-V Operation· Gate-Source ESD ProtectionApplication· Drive...
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Parameter | Symbol | 5 secs | Steady State | Unit | |
Drain-Source Voltage | VDS | -20 | V | ||
Gate-Source Voltage | VGS | ±6 | |||
Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -390 | -370 | mA |
TA = 85 | -280 | -265 | |||
Continuous Source Current (Diode Conduction)a | IS | -450 | -380 | ||
Pulsed Drain Current | IDM | -650 | |||
Maximum Power Dissipationa | TA = 25 | PD | 280 | 250 | mW |
TA = 85 | 145 | 130 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 |