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Si1024X

Features: ·Very Small Footprint· High-Side Switching· Low On-Resistance: 0.7 · Low Threshold: 0.8 V (typ)· Fast Swtiching Speed: 10 ns· 1.8-V Operation· Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories· Battery Operated Systems· Power Supply Con...

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SeekIC No. : 004489851 Detail

Si1024X: Features: ·Very Small Footprint· High-Side Switching· Low On-Resistance: 0.7 · Low Threshold: 0.8 V (typ)· Fast Swtiching Speed: 10 ns· 1.8-V Operation· Gate-Source ESD ProtectionApplication· Drive...

Si1024X Data Sheet

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Part Number:
Si1024X
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

·Very Small Footprint
· High-Side Switching
· Low On-Resistance: 0.7 
· Low Threshold: 0.8 V (typ)
· Fast Swtiching Speed: 10 ns
· 1.8-V Operation
· Gate-Source ESD Protection




Application

· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories
· Battery Operated Systems
· Power Supply Converter Circuits
· Load/Power Switching Cell Phones, Pagers




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel Unit
5 secs Steady State
Drain-Source Voltage VDS 20 V
Gate-Source Voltage ±6
Continuous Drain Current (TJ = 150)a TA = 25 ID 515 485 A
TA = 85 370 -265
Continuous Source Current (Diode Conduction)a IS 450 -380
Pulsed Drain Currentb IDM 650
Maximum Power Dissipationa TA = 25 PD 280 250 W
TA = 85 145 130
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V





Description

Si1024X Dual N-Channel 1.8-V (G-S) MOSFET




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