Si1026X

The SI1026X is designed as one kind of N-channel 60-V (D-S) MOSFET that can be used in wide range of applications such as (1)drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.; (2)battery operated systems; (3)solid-state relays. And the benefits of SI1026X are:(1)low offset voltage; (2)low-voltage operation; (3)high-speed circuits; (4)low error voltage; (5)small board area.

Features of the SI1026X are:(1)low on-resistance: 1.40 ; (2)low threshold: 2 V (typ); (3)low input capacitance: 30 pF; (4)fast switching speed: 15 ns (typ); (5)low input and output leakage; (6)miniature package.

The absolute maximum ratings of the SI1026X can be summarized as:(1)Drain-Source Voltage: 60 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current (TJ = 150 ) TA = 25: 320 or 305 mA;(4)Continuous Drain Current (TJ = 150 ) TA = 85: 230 or 220 mA;(5)Pulsed Drain Current: -650 mA;(6)Continuous Source Current (diode conduction): 450 or 380 mA;(7)Operating Junction and Storage Temperature Range: 55 to 150 ;(8)Gate-Source ESD Rating (HBM, Method 3015): 2000 V.

The electrical characteristics of SI1026X can be summarized as:(1)Drain-Source Breakdown Voltage: 60 V;(2)Gate-Threshold Voltage: 1 to 2.5 V;(3)Gate-Body Leakage: +/- 150 nA or +/- 50 nA;(4)Zero Gate Voltage Drain Current: 10 or 100 nA;(5)On-State Drain Current: 500 or 800 mA;(6)On-State Drain Current: 200 ms;(7)Diode Forward Voltage: 1.40 V. If you want to know more information about SI1026X, please download the datasheet in www.seekic.com or www.chinaicmart.com .