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Si1031R

Features: · High-Side Switching· Low On-Resistance: 8 · Low Threshold: 0.9 V (typ)· Fast Switching Speed: 45 ns· 1.8-V Operation·Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories· Battery Operated Systems· Power Supply Converter Circuits· Load/Po...

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SeekIC No. : 004489855 Detail

Si1031R: Features: · High-Side Switching· Low On-Resistance: 8 · Low Threshold: 0.9 V (typ)· Fast Switching Speed: 45 ns· 1.8-V Operation·Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, L...

Si1031R Data Sheet

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Part Number:
Si1031R
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High-Side Switching
· Low On-Resistance: 8 
· Low Threshold: 0.9 V (typ)
· Fast Switching Speed: 45 ns
· 1.8-V Operation
·Gate-Source ESD Protection




Application

· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories
· Battery Operated Systems
· Power Supply Converter Circuits
· Load/Power Switching Cell Phones, Pagers




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 ?20 V
Gate-Source Voltage VGS ±6
Continuous Drain Current (TJ = 150)a TA = 25 ID -150 -140 -165 -155 A
TA = 85 -110 -100 -150 -125
Continuous Source Current (Diode Conduction)a IS -250 -200 -340 -240
Pulsed Drain Currentb IDM -500 -600
Maximum Power Dissipationa TA = 25 PD 280 250 340 300 W
TA = 85 145 130 170 150
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V





Description

Si1031R P-Channel 1.8-V (G-S) MOSFET




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