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Si1032X

Features: ` Low-Side Switching` Low On-Resistance: 5 ` Low Threshold: 0.9 V (typ)` Fast Switching Speed: 35 ns` 1.8-V Operation` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories· Battery Operated Systems· Power Supply Converter Circuits· Load/Pow...

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SeekIC No. : 004489858 Detail

Si1032X: Features: ` Low-Side Switching` Low On-Resistance: 5 ` Low Threshold: 0.9 V (typ)` Fast Switching Speed: 35 ns` 1.8-V Operation` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, La...

Si1032X Data Sheet

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Part Number:
Si1032X
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low-Side Switching
` Low On-Resistance: 5
` Low Threshold: 0.9 V (typ)
` Fast Switching Speed: 35 ns
` 1.8-V Operation
` Gate-Source ESD Protection




Application

· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories
· Battery Operated Systems
· Power Supply Converter Circuits
· Load/Power Switching Cell Phones, Pagers




Pinout

Connection Diagram




Specifications

Parameter Symbol Si1032R Si1032X Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 20 V
Gate-Source Voltage VGS ±6
Continuous Drain Current (TJ = 150)a TA = 25 ID 200 140 210 200 mA
TA = 85 110 100 150 140
Continuous Source Current (Diode Conduction)a IS 250 200 300 240
Pulsed Drain Currentb IDM 500 600
Maximum Power Dissipationa TA = 25 PD 280 250 340 300 mW
TA = 85 145 130 170 150
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V





Description

Si1032X N-Channel 1.5-V (G-S) MOSFET




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