Features: · High-Side Switching· Low On-Resistance: 8 · Low Threshold: 0.9 V (typ)· Fast Switching Speed: 45 ns (typ)· 1.5-V Operation· Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories· Battery Operated Systems· Power Supply Converter Circuits· ...
Si1033X: Features: · High-Side Switching· Low On-Resistance: 8 · Low Threshold: 0.9 V (typ)· Fast Switching Speed: 45 ns (typ)· 1.5-V Operation· Gate-Source ESD ProtectionApplication· Drivers: Relays, Solen...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -20 | V | ||
| Gate-Source Voltage | VGS | ±5 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -155 | -145 | mA |
| TA = 85 | -110 | -105 | |||
| Continuous Source Current (Diode Conduction)a | IS | -450 | -380 | ||
| Pulsed Drain Current | IDM | -650 | |||
| Maximum Power Dissipationa | TA = 25 | PD | 280 | 250 | mW |
| TA = 85 | 145 | 130 | |||
| Gate-Source ESD Rating (HBM, Method 3015) | ESD | 2000 | V | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||